>8-18G GaN MMIC power amplifier successfully launched on 15th Aug 2023. main parts information as below

The JZXHN0818-P46 stands as a high-power amplifier chip utilizing GaN HEMT transistor technology, crafted through the 0.25 μm GaN MMIC process. It operates within the frequency range of 8GHz to 18GHz, exhibiting a power gain of 18dB, a typical saturation output power of 40W, and a power additional efficiency of 25%. In pulse mode, the chip is grounded through a back hole and operates with dual power supply, with a standard working voltage of Vd=+32V and Vg=-2.5V. Primarily designed for microwave transceiver modules and high-power solid-state transmitters, this chip offers versatile applications in related fields.

> 1200w GaN power amplifier transistor successfully launched on 15th Sep 2023

XHGFL1200  is pre-matching broadband GaN power amplifier transistor, working frequency coverage: 0.99~1.13 GHz,  It addressing the environmental adaptability needs of high power, high efficiency and temperature-resistance RF / microwave systems, the transistor is designed to meet the stringent requirement of high performance application in communication, EMC, radio positioning, telemetry and remote control